If you are wondering why has one of our founding class been seen ironing Saudi riyal banknotes, all will soon be revealed in a paper in Advanced Materials.
Meanwhile the work of Associate Professor Husam Alshareef, PhD student Mohd Adnan Khan, and postdoctoral scientist Dr. Unnat Bhansali around a solution for banknote counterfeiting is highlighted this week in the Royal Society of Chemistry journal, Chemistry World.
Be sure to read the full story in the May edition of The Beacon.
3 Comment
Another impressive work on bank note with the same objective of defeating forgery. Learnt a lot from this one and the earlier one published in 2010 by another group (Germany and Japan) tited “Organic Electronics on Banknotes” in Advanced Materials (Volume 23, Issue 5, pages 654–658, February 1, 2011). Hopefully soon we will make it to the front page like that group did.
While many organic electronics have been fabricated on a wide array of substrates including plastic, paper, and banknotes, the report in Advanced Materials by KAUST is the first ever demonstration of non-volatile organic ferroelectric memory on banknotes. This work is significant since it shows that organic ferroelectric memory, whose performance is especially sensitive to surface roughness, was made on the rough Riyal surface with performance matching to similar devices made on silicon substrates. This result showed that organic ferroelectric memory can replace traditional EEPROM memory used in RFID tags. The references mentioned in the previous comment are already included in our paper, but have nothing to do with the new memory devices we demonstrated on banknotes. All three reviewers of Advanced Materials have complimented the performance we achieved.
We applaud the achievement made in KAUST to demonstrate the first ever non-volatile organic ferroelectric memory fabricated on Suadi Riyal with performance matching to similar devices made on silicon substrates. It is definitely much difficult achievement than the previous basic work on plastic published in Science 11 December 2009: Vol. 326 no. 5959 pp. 1516-1519 (DOI: 10.1126/science.1179963):
“Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays” by
Tsuyoshi Sekitani1, Tomoyuki Yokota, Ute Zschieschang, Hagen Klauk, Siegfried Bauer, Ken Takeuchi, Makoto Takamiya, Takayasu Sakurai and Takao Someya