Keysight Technologies will conduct a complimentary technical seminar on characterization & modelling of semiconductor devices in KAUST. This special event offers a unique opportunity to learn about the latest developments from Keysight’s Electronic Measurement Division.
Tuesday, January 27
9:00 a.m. – 4:00 p.m.
Ibn Sina (building 3), Level 5 (room 5220)
Seminar Topics:
- Live demonstration of GaN device characterization flow: DC I-V characteristic extraction, RF Power measurement, Spice models creation for further usage in Design stage.
- Millimeter wave on wafer measurement.
- High Power Devices measurement.
- III-V devices spice model (DynaFET…).
- Nonlinear Component characterization devices.
Schedule:
9:00 a.m. – Keynote: Toward technology unification -Blending power/light/cost/speed on single substrate addressing novel semiconductor challenges
9:30 a.m. – Novel Devices and Material characterization at mm-wave and Terahertz
10:15 a.m. – Break – Technology fair
10:45 a.m. – Nanotechnology measurement
11:30 a.m. – High Power Measurement challenges – GaN / SiC / III-V Characterization
12:00 p.m. – Lunch/prayer – Technology fair
1:15 p.m. – On-Wafer Measurement and Analysis of Flicker Noise and Random Telegraph Noise
2:00 p.m. – Demo: Measurement and modeling of UMS GaN device (B1500, PNA-X, IC-CAP)
3:00 p.m. – Break – Technology fair
3:30 p.m. – Industry Trends and Solutions in Nonlinear Component Characterization with NVNA
4:00 p.m. – Closing session
For registration, please email Rashid Rehan at rrehan@alfaisaliah.com or call 012 603-7558.
For more information, please email Long Chen at long.chen@kaust.edu.sa or call 012 808-2342.